Photo-enhanced Metal-assisted Chemical Etching of α-Gallium Oxide Grown by Halide Vapor-Phase Epitaxy on a Sapphire Substrate and its Applications
نویسندگان
چکیده
The development of an etching process with controllable rate and high selectivity is key to fabricating high-performance electronic optoelectronic devices. In this paper, we report the photo-enhanced metal-assisted...
منابع مشابه
Optimization of High-Quality AlN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy
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ژورنال
عنوان ژورنال: Materials advances
سال: 2023
ISSN: ['2633-5409']
DOI: https://doi.org/10.1039/d3ma00424d